由 D Sheldon 著作 · 被引用 13 次 — Disturb testing is designed to study the robustness of the data storage of the flash cells when the state of a nearby cell is being changed, either through ...
由 Y Cai 著作 · 被引用 232 次 — Read disturb is a well-known phenomenon in NAND flash memory, where reading data from a flash cell can cause the threshold voltages of other (unread) cells in ...
Read retry: This feature is designed for flash memory to adjust the read reference voltage and eliminate the read error. Recommended Products. MTE470A ...